Towards pioneering Wireless Communication...
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Feature of SiGe HBT BiCMOS Process
Research Thrust I: Low Cost, High Performance SiGe HBT BiCMOS Front-End-Module (FEM) for Wireless Communication
Highly Linear 5 GHz Band SiGe HBT Power Amplifier Module (PAM) for The Next Generation Wi-Fi Communication
F-1 SiGe HBT Power Amplifiers for X-band SAR RADAR
5/6 GHz Reconfigurable Dual-Band SiGe HBT Power Amplifier for the Next Generation Wi-Fi Communication
Research Thrust II: SiGe HBT BiCMOS Integrated Front-End (FE) for Emerging LEO/VLEO Satellite Communication (SATCOM)
Energy-Efficient Ultra-Broadband 2-24 GHz SiGe HBT Power Amplifier for Satellite Communication (SATCOM)
V-band SiGe HBT Frequency Quadrupler for VLEO SATCOM
Highly Efficient, High Power SiGe HBT Frequency Doubler for 5G Wireless Communication
Compact Ku-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM
Compact Ka-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM
Compact Q/V-band SiGe HBT Power Amplifier for Very Low Earth Orbit SATCOM
Energy-Efficient Ku-band Passive Phase Shifter for Low Earth Orbit SATCOM
Ka-band Active Phase Shifter with Tunable Differential Quadrature Hybrid for Low Earth Orbit SATCOM
A Novel Single Shared Inductor for Passive Designs
Research Thrust III: Chip-to-Chip, Chip-to-Antenna, and Chip-to-Package Co-Design for Emering Wireless Communication and Sensing Applications
Energy-Efficient Ka-band Wireless Transmit/Receive Frontend IC for 5G mmWave Wireless Communication
Ku-band SiGe HBT Flip-Chip Power Amplifier Module
V-band OOK Transmit/Receive System-on-Package (SoP)
Low Loss SiGe HBT SPDT Switch for X-band Radar
Co-Design of X-band SiGe HBT LNA - CMOS SPDT SW
Research Thrust IV: High Power, Broadband III-V GaN HEMT Integrated Frontend Electronics for Space and Military Applications
SAR Payload for Earth Observation
Broadband Jamming for Electronic War
Thermally Aware GaN Frontend Electronics Design Example
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