Towards pioneering Wireless Communication...

Feature of SiGe HBT BiCMOS Process

Research Thrust I: Low Cost, High Performance SiGe HBT BiCMOS Front-End-Module (FEM) for Wireless Communication

Highly Linear 5 GHz Band SiGe HBT Power Amplifier Module (PAM) for The Next Generation Wi-Fi Communication

F-1 SiGe HBT Power Amplifiers for X-band SAR RADAR

5/6 GHz Reconfigurable Dual-Band SiGe HBT Power Amplifier for the Next Generation Wi-Fi Communication

Research Thrust II:  SiGe HBT BiCMOS Integrated Front-End (FE) for Emerging LEO/VLEO Satellite Communication (SATCOM)

Energy-Efficient Ultra-Broadband 2-24 GHz SiGe HBT Power Amplifier for Satellite Communication (SATCOM)

V-band SiGe HBT Frequency Quadrupler for VLEO SATCOM

Highly Efficient, High Power SiGe HBT Frequency Doubler for 5G Wireless Communication

Compact Ku-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM

Compact Ka-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM

Compact Q/V-band SiGe HBT Power Amplifier for Very Low Earth Orbit SATCOM

Energy-Efficient Ku-band Passive Phase Shifter for Low Earth Orbit SATCOM

Ka-band Active Phase Shifter with Tunable Differential Quadrature Hybrid for Low Earth Orbit SATCOM

A Novel Single Shared Inductor for Passive Designs 

Research Thrust III: Chip-to-Chip, Chip-to-Antenna, and Chip-to-Package Co-Design for Emering Wireless Communication and Sensing Applications

Energy-Efficient Ka-band Wireless Transmit/Receive Frontend IC for 5G mmWave Wireless Communication

Ku-band SiGe HBT Flip-Chip Power Amplifier Module

V-band OOK Transmit/Receive System-on-Package (SoP) 

Low Loss SiGe HBT SPDT Switch for X-band Radar

Co-Design of X-band SiGe HBT LNA - CMOS SPDT SW

Research Thrust IV: High Power, Broadband III-V GaN HEMT Integrated Frontend Electronics for Space and Military Applications

SAR Payload for Earth Observation

Broadband Jamming for Electronic War

Thermally Aware GaN Frontend Electronics Design Example