Towards pioneering Wireless Communication...
Feature of SiGe HBT BiCMOS Process
Research Thrust I: Low Cost, High Performance SiGe HBT BiCMOS Front-End-Module (FEM) for Wireless Communication
Highly Linear 5 GHz Band SiGe HBT Power Amplifier Module (PAM) for The Next Generation Wi-Fi Communication
F-1 SiGe HBT Power Amplifiers for X-band SAR RADAR
5/6 GHz Reconfigurable Dual-Band SiGe HBT Power Amplifier for the Next Generation Wi-Fi Communication
Research Thrust II: Â SiGe HBT BiCMOS Integrated Front-End (FE) for Satellite Communication (SATCOM)
Energy-Efficient Ultra-Broadband 2-24 GHz SiGe HBT Power Amplifier for Satellite Communication (SATCOM)
V-band SiGe HBT BiCMOS Frequency Quadrupler for VLEO SATCOM
Highly Efficient, High Power SiGe HBT Frequency Doubler for 5G Wireless Communication
Compact Ku-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM
Compact Ka-band SiGe HBT Power Amplifier for Low Earth Orbit SATCOM
Compact Q/V-band SiGe HBT Power Amplifier for Very Low Earth Orbit SATCOM
Energy-Efficient Ku-band Passive Phase Shifter for Low Earth Orbit SATCOM
Tunable Ka-band Active Phase Shifter for Low Earth Orbit SATCOM
Ultra-Compact Ku-band SiGe HBT SPDT Switch
Ultra-Compact Ka-band Wilkinson Divider/Combiner
Research Thrust III: Chip-to-Chip, Chip-to-Antenna, and Chip-to-Package Co-Design for sub-THz 6G Wireless Communication and RADAR Sensor Applications
Energy-Efficient Ka-band Wireless Transmit/Receive Frontend IC for Inter-Satellite-Link (ISL)
Ku-band SiGe HBT Power Amplifier Module Using Flip-Chip Package
V-band OOK Transmit/Receive System-on-Package (SoP) for Ultra-High Speed Wireless Communication
Low Loss SiGe HBT SPDT Switch for X-band Radar
Co-Design of X-band SiGe HBT LNA - CMOS SPDT SW