Towards pioneering Wireless Communication...

Feature of SiGe HBT BiCMOS Process

Research Thrust I: Low Cost, High Performance SiGe HBT BiCMOS Front-End-Module (FEM) for Wireless Communication

Highly Linear 5 GHz Band SiGe HBT Power Amplifier Module (PAM) for The Next Generation Wi-Fi Communication

Energy-Efficient Inverse Class F SiGe HBT Power Amplifier Integrated Circuits for low cost X-band RADAR applications

Compact, Low Loss, and Wideband Wilkinson Power Divider/Combiner for Wideband Wireless Communication

Research Thrust II: SiGe HBT BiCMOS Integrated Front-End (FE) for Satellite Communication (SATCOM)

Energy-Efficient Ultra-Broadband 2-24 GHz SiGe HBT Power Amplifier for Satellite Communication (SATCOM)

High Power V-band SiGe HBT Frequency Quadrupler for Broadband SATCOM Access

Highly Efficient, High Power SiGe HBT Frequency Doubler for 5G Wireless Communication

Research Thrust III: Chip-to-Chip, Chip-to-Antenna, and Chip-to-Package Co-Design for sub-THz 6G Wireless Communication and RADAR Sensor Applications

Compact, Low Loss SiGe HBT SPDT Switch for X-band Radar

Co-Design of SiGe HBT Low Noise Amplifier and CMOS SPDT Switch for X-band Radar

V-band OOK Wireless Transmit and Receive Phased Array Module for 802.11ad Ultra-High Speed Short Range Wireless Communication