~International Conferences~
I.S. Han, H.J. Lee, and I. Ju, “Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with A Reconfigurable Built-In Diode RF Switch,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Accepted, June 2024.
H.J. Lee, I.S. Han, J. Hwang, and I. Ju, “An Efficient, High Power Q-Band SiGe HBT Power Amplifier With A Compact Four-Way Wilkinson Power Combiner Balun for Emerging Very Low-Earth-Orbit SATCOM,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Accepted, June 2024.
B. Yoon, I.S. Han, J. Kim, and I. Ju, “A Compact, Highly Linear Ku-Band SiGe HBT Power Amplifier Using Shared Single Center-Tap Four-Way Output Transformer Balun for Emerging Low Earth Orbit SATCOM Phased-Array Transmitter,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Accepted, June 2024.
S. Kim, K.W. Choi, J. Kim, and I. Ju, “Compact, Low Loss 4-Bit Ku-band Hybrid Passive Phase Shifter Realized in 0.13-μm SiGe HBT BiCMOS for LEO SATCOM,” IEEE International Microwave Symposium (IMS), Accepted, June 2024.
I. Ju and J.D. Cressler, “A Compact, Low Loss, and Broadband Two-Section Lumped-Element Wilkinson Power Combiner Using 130 nm SiGe HBT BiCMOS Technology,” IEEE Global Symposium on Millimeter-Wave (GSMM), May 2022.
S. Lee, I. Ju et al, “A 2-24 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance Transformer,” IEEE International Microwave Symposium (IMS), June 2021.
S. Lee, I. Ju et al, “Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier,” IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov. 2020.
I. Ju et al, “A Highly Linear, High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifier Using a Compact 2nd-harmonic-Shorting Four-Way Transformer and Integrated Thermal Sensors,” IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2019.
I. Ju and J.D. Cressler, “An X-band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-tuned Output Transformer,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2017.
I. Ju et al, “Co-design of a SiGe BiCMOS X-Band, Asymmetric, Low Insertion Loss, High Power Handling SPDT Switch and an Ultra Low Noise LNA for Next-Generation T/R Module,” IEEE International Microwave Symposium (IMS), May 2016.